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| 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions * Gate Triggering 4 Mode -- 2N6071A,B, 2N6073A,B, 2N6075A,B * Blocking Voltages to 600 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Device Marking: Device Type, e.g., 2N6071A, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating *Peak Repetitive Off-State Voltage(1) (TJ = to 110C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B Symbol VDRM, VRRM 200 400 600 IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg -- 4.0 30 3.7 10 0.5 5.0 -40 to +110 -40 to +150 8.0 Amps Amps A2s Watts Watt Volts 1 2 3 Value Unit Volts http://onsemi.com TRIACS 4 AMPERES RMS 200 thru 600 VOLTS MT2 G MT1 *40 3 *On-State RMS Current (TC = 85C) Full Cycle Sine Wave 50 to 60 Hz *Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power (Pulse Width 1.0 s, TC = 85C) *Average Gate Power (t = 8.3 ms, TC = 85C) *Peak Gate Voltage (Pulse Width 1.0 s, TC = 85C) *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw)(2) *Indicates JEDEC Registered Data. 21 TO-225AA (formerly TO-126) CASE 077 STYLE 5 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate ORDERING INFORMATION C C in. lb. Device 2N6071A 2N6071B 2N6073A 2N6073B 2N6075A 2N6075B Package TO225AA TO225AA TO225AA TO225AA TO225AA TO225AA Shipping 500/Box 500/Box 500/Box 500/Box 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2000 1 May, 2000 - Rev. 3 Publication Order Number: 2N6071/D 2N6071A/B Series THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 3.5 75 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 110C IDRM, IRRM -- -- -- -- 10 2 A mA ON CHARACTERISTICS *Peak On-State Voltage(1) (ITM = A Peak) "6 VTM VGT -- -- 2 Volts Volts *Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = -40C) All Quadrants Gate Non-Trigger Voltage (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110C) All Quadrants *Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = Adc) -- VGD 0.2 IH 1.4 2.5 Volts -- -- mA "1 (TJ = -40C) (TJ = 25C) tgt -- -- -- -- -- 1.5 30 15 -- s Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc) QUADRANT (Maximum Value) Type Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc RL = 100 ohms) Vdc, 2N6071A 2N6073A 2N6075A 2N6071B 2N6073B 2N6075B IGT @ TJ +25C -40C +25C -40C I mA 5 20 3 15 II mA 5 20 3 15 III mA 5 20 3 15 IV mA 10 30 5 20 DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage @ VDRM, TJ = 85C, Gate Open, ITM = 5.7 A, Exponential Waveform, Commutating di/dt = 2.0 A/ms *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. dv/dt(c) -- 5 -- V/s http://onsemi.com 2 2N6071A/B Series SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 MC7400 4 7 VEE = 5.0 V + 2N6071A LOAD 115 VAC 60 Hz 0V -VEE 510 Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM http://onsemi.com 3 2N6071A/B Series Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. SENSITIVE GATE LOGIC REFERENCE IC Logic g Functions TTL Firing Quadrant I II 2N6071A Series 2N6071A Series 2N6071B Series 2N6071B Series 2N6071A Series 2N6071A Series 2N6071A Series 2N6071B Series 2N6071A Series III 2N6071A Series 2N6071A Series 2N6071B Series IV HTL CMOS (NAND) CMOS (Buffer) Operational Amplifier Zero Voltage Switch http://onsemi.com 4 2N6071A/B Series 110 110 = 30 60 TC , CASE TEMPERATURE ( C) TC , CASE TEMPERATURE ( C) 90 100 100 = 30 60 90 90 120 180 dc 80 70 = CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 a 90 120 180 80 a 70 a dc = CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0 Figure 1. Average Current Derating 8.0 a P(AV) , AVERAGE POWER (WATTS) 6.0 a = CONDUCTION ANGLE 60 4.0 = 30 90 180 120 dc P(AV) , AVERAGE POWER (WATTS) 6.0 a 8.0 Figure 2. RMS Current Derating a dc = 180 120 = CONDUCTION ANGLE 4.0 2.0 2.0 90 0 30 60 0 0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 1.0 4.0 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0 Figure 3. Power Dissipation V GT , GATE TRIGGER VOLTAGE (NORMALIZED) I GT , GATE TRIGGER CURRENT (NORMALIZED) 3.0 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 3.0 2.0 Figure 4. Power Dissipation OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.0 0.7 0.5 1.0 0.7 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 0.3 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 Figure 5. Typical Gate-Trigger Voltage Figure 6. Typical Gate-Trigger Current http://onsemi.com 5 2N6071A/B Series 40 30 20 IH, HOLDING CURRENT (NORMALIZED) 3.0 2.0 GATE OPEN APPLIES TO EITHER DIRECTION 1.0 0.7 0.5 10 7.0 ITM , ON-STATE CURRENT (AMP) 5.0 TJ = 110C 0.3 -60 -40 -20 0 20 40 60 80 100 120 140 3.0 2.0 TJ, JUNCTION TEMPERATURE (C) Figure 8. Typical Holding Current TJ = 25C 1.0 PEAK SINE WAVE CURRENT (AMP) 0.7 0.5 34 32 30 28 26 24 22 20 18 16 14 1.0 TJ = -40 to +110C f = 60 Hz 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 VTM, ON-STATE VOLTAGE (VOLTS) 2.0 3.0 4.0 5.0 7.0 10 NUMBER OF FULL CYCLES Figure 7. Maximum On-State Characteristics Z JC(t), TRANSIENT THERMAL IMPEDANCE (C/W) 10 5.0 3.0 2.0 Figure 9. Maximum Allowable Surge Current MAXIMUM TYPICAL 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response http://onsemi.com 6 2N6071A/B Series PACKAGE DIMENSIONS TO-225AA (formerly TO-126) CASE 077-09 ISSUE W -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE http://onsemi.com 7 2N6071A/B Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6071/D |
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